Do you wish to develop a compact switch-mode energy provide (SMPS)? Then a gallium nitride (GaN) primarily based FET is a better option in comparison with a silicon primarily based FET attributable to its increased energy density, smaller gate cost and quicker switching pace.
This text discuses about TIDA-01634, a SMPS refence design for from Texas Devices. TIDA-01634 is a compact SMPS which makes use of a GaN energy HEMTs and the LMG1210 GaN half-bridge driver to appreciate a multi-MHz energy stage with excessive effectivity. The excessive switching frequency of as much as 50MHz permits it to have a really quick response price making it appropriate for software reminiscent of in 5G telecom energy, industrial energy provides, server, and so forth.
GaN and excessive electron mobility transistors (HEMTs) affords no restoration loss, smaller gate cost, quicker switching, and exhibit a decrease determine of advantage. Using half-bridge driver permits it single PWM enter with configurable lifeless time or two impartial inputs for high-side and low-side gate drive. Lifeless-time adjustment will be realized with two resistors for low-to-high and high-to-low transition settings from 0 ns to twenty ns. The design can work for prolonged time frame attributable to low thermal dissipation and likewise the bootstrap switching motion prevents overvoltage of high-side gate attributable to giant third quadrant voltage drop of GaN HEMTs.
Block diagram of the SMPS
Effectivity of the Design
The design has a excessive effectivity of as much as 97%, picture beneath exhibits the effectivity of the SMPS when the facility stage is operating at 10 MHz with a 85% obligation cycle with respect to totally different output present.
Design Sources
TI has shared all of the assets reminiscent of software notes, gerber recordsdata, PCB structure, and so forth for this reference design to simplify the designing course of. All of the shared assets will be accessed by clicking on this hyperlink.
