With their low on-resistance, Nexperia’s 12-V and 30-V N-channel trench MOSFETs reduce power losses and improve effectivity. The 30-V PMCB60XN and PMCB60XNE are available ultra-compact wafer-level DSN1006 (SOT8026) packages, whereas the 12-V PMCA14UN is housed in a DSN1010 (SOT8007) bundle.
Nexperia experiences that the MOSFETs’ RDS(on) is as much as 25% higher than competing units. Simplified thermal administration and tiny packaging make the elements well-suited for miniaturized client electronics, akin to smartphones, sensible watches, listening to aids, and earphones. And the elements’ diminished self-heating enhances person consolation in wearable units.
The 30-V PMCB60XN and PMCB60XNE have a most RDS(on) of fifty mΩ and 55 mΩ, respectively, at a VGS of 4.5 V. In response to Nexperia, this provides them the bottom on-resistance per die space in comparison with comparable 30-V MOSFETs. Each MOSFETs are rated for drain present as much as 4 A. As well as, the PMCB60XNE packs 2-kV ESD safety into its 1.0×0.6×0.2-mm bundle.
The 12-V PMCA14UN supplies a most RDS(on) of 16 mΩ at a VGS of 4.5 V. Bundle dimensions of this high-efficiency machine are simply 0.96×0.96×0.24 mm.
Now in manufacturing, the PMCB60XN, PMCB60XNE, and PMCA14UN MOSFETs may be bought immediately from Nexperia or from its distributor Farnell.
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