Texas Devices’ DRV8300U Gate Driver is 100V three half-bridge gate drivers, able to driving high-side and low-side N-channel energy MOSFETs.
A gate driver is an influence amplifier that accepts a low energy enter from a controller IC and produces the suitable excessive present gate drive for an influence system. It’s used when a PWM controller can’t present the output present required to drive the gate capacitance of the related energy system.
The DRV8300UD three-phase gate driver generates the right gate drive voltages utilizing an built-in bootstrap diode and exterior capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive structure helps peak as much as 750mA supply and 1.5A sink currents.
The part pins SHx can tolerate the numerous destructive voltage transients. On the similar time, the excessive aspect gate driver provide BSTx and GHx can assist greater constructive voltage transients (125V) abs max voltage which improves the system’s robustness. Small propagation delay and delay matching specs reduce the deadtime requirement, additional enhancing effectivity. Beneath-voltage safety is supplied for each the low and high-side of the Texas Devices DRV8300U by means of GVDD and BST under-voltage lockout.
Options
- 100V three-phase half-bridge gate driver
– Drives N-channel MOSFETs (NMOS)
– 5V to 20V gate driver provide (GVDD)
– MOSFET provide (SHx) assist as much as 100V - Built-in bootstrap diodes (DRV8300UD gadgets)
- Helps inverting and non-inverting INLx inputs
- Bootstrap gate drive structure
– 750mA supply present
– 1.5A sink present - Helps as much as 15S battery-powered purposes
- Increased BSTUV (8V typ.) and GVDDUV (7.6V typ.) threshold to assist customary MOSFETs
- Low leakage present on SHx pins (< 55µA)
- Absolute most BSTx voltage as much as 125V
- Helps destructive transients as much as -22V on SHx
- Constructed-in cross-conduction prevention
- Adjustable deadtime by means of DT pin for QFN bundle variants
- Mounted deadtime insertion of 200nS for TSSOP bundle variants
- Helps 3.3V and 5V logic inputs with 20V Abs max
4nS typical propagation delay matching - Compact QFN and TSSOP packages
- Environment friendly system design with energy blocks
- Built-in safety options
– BST undervoltage lockout (BSTUV)
– GVDD undervoltage (GVDDUV)
Purposes
- E-bikes, E-scooters, and E-mobility
- Followers, pumps, and servo drives
- Brushless-DC (BLDC) motor modules and PMSM
- Cordless backyard and energy instruments, lawnmowers
- Drones, robotics, and RC toys
- Industrial and logistics robots
