EPC expands its portfolio of off-the-shelf GaN FETs in thermally enhanced packages with the introduction of the 100-V, 3.8-mΩ EPC2306. The machine is footprint-compatible with the beforehand launched 100-V, 1.8-mΩ EPC2302. Engineers can commerce off on-resistance versus worth to optimize designs for effectivity or value by dropping in a unique half quantity in the identical PCB footprint.
The EPC2306 enhancement-mode GaN energy transistor is meant for 48-V DC/DC conversion in high-density computing, 48-V BLDC motor drives for e-mobility and robotics, photo voltaic optimizers and microinverters, and Class D audio purposes. Along with low RDS(on) of three.8 mΩ, the FET supplies low QG, QGD, and QOSS for low conduction and switching losses. Its thermally enhanced QFN package deal has an uncovered high and a footprint of simply 3×5 mm.
A half-bridge improvement board that includes the EPC2306 GaN FET simplifies the analysis course of to hurry time to market. With a most voltage of 100 V and most output present of 45 A, the EPC90145 mounts all essential elements on a 50.8×50.8-mm board.
Out there now from Digi-Key, the EPC2306 GaN FET prices $3.08 in a number of 1000 items, whereas the EPC90145 improvement board prices $200.
Environment friendly Energy Conversion
Discover extra datasheets on merchandise like this one at Datasheets.com, searchable by class, half #, description, producer, and extra.
