STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon energy MOSFETs are perfect for switched-mode energy provides (SMPS) in functions from data-center servers and 5G infrastructure to flat-panel televisions.
The primary gadgets to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Each have very low on-resistance (RDS(on)) per unit space, which maximizes energy density and permits compact system dimensions. Every has the most effective most RDS(on) (RDS(on)max) in its class, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9. With very low gate cost (Qg), usually 80nC at 400V drain voltage, these gadgets have the most effective RDS(on)max x Qg determine of advantage (FoM) at the moment accessible.
The gate threshold voltage (VGS(th)), usually 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimizes each turn-on and turn-off switching losses in contrast with the sooner MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 sequence additionally characteristic a really low reverse restoration cost (Qrr) and reverse restoration time (trr), which additional contribute to improved effectivity and switching efficiency.
An additional characteristic of ST’s newest high-voltage MDmesh applied sciences is a further platinum diffusion course of that ensures a quick intrinsic physique diode. The height diode-recovery slope (dv/dt) is bigger than for earlier processes. All gadgets belonging to MDmesh DM9 expertise are extraordinarily rugged and might face up to dv/dt as much as 120V/ns at 400V.
ST’s new MDmesh M9 and DM9 gadgets, the STP65N045M9 and STP60N043DM9, each in a TO-220 energy package deal, are already in manufacturing and they are going to be accessible at distributors by the top of Q2 2022. The STP65N045M9 will likely be priced from $6.30 for orders of 1000 items. Additional normal surface-mount and through-hole packages choices will likely be added later in 2022.
